RTL030P02TR

Rohm Semiconductor

RTL030P02TR

模拟与电源

MOSFET P-CH 20V 3A TUMT6

已停产6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs70mOhm @ 3A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id2V @ 1mA

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
最大功耗1W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
供应商器件封装TUMT6

环境

工作温度150°C (TJ)