RTF016N05TL

Rohm Semiconductor

RTF016N05TL

Datasheet

模拟与电源

MOSFET N-CH 45V 1.6A TUMT3

在产3-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs190mOhm @ 1.6A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 1mA

电气

漏源电压45 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
最大功耗320mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case3-SMD, Flat Leads
供应商器件封装TUMT3

环境

工作温度150°C (TJ)