RT1E050RPTR

Rohm Semiconductor

RT1E050RPTR

Datasheet

模拟与电源

MOSFET P-CH 30V 5A 8TSST

已停产8-SMD, Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs36mOhm @ 5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
最大功耗1.25W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
供应商器件封装8-TSST

环境

工作温度150°C (TJ)