RT1A045APTCR

Rohm Semiconductor

RT1A045APTCR

Datasheet

模拟与电源

MOSFET P-CH 12V 4.5A 8TSST

已停产8-SMD, Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs30mOhm @ 4.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 6 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)-8V
Vgs(th) (Max) @ Id1V @ 1mA

电气

漏源电压12 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
最大功耗650mW (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SMD, Flat Lead
供应商器件封装8-TSST

环境

工作温度150°C(TJ)