RSS040P03FU6TB

Rohm Semiconductor

RSS040P03FU6TB

模拟与电源

MOSFET P-CH 30V 4A 8SOP

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs58mOhm @ 4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
最大功耗2W (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度150°C(TJ)