RSJ151P10TL

Rohm Semiconductor

RSJ151P10TL

Datasheet

模拟与电源

MOSFET P-CH 100V 15A LPTS

在产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs120mOhm @ 15A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 25 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
最大功耗1.35W (Ta), 50W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装LPTS

环境

工作温度150°C (TJ)