RSJ10HN06TL

Rohm Semiconductor

RSJ10HN06TL

模拟与电源

MOSFET N-CH 60V 100A LPTS

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态停产/老旧
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
最大功耗100W (Tc)

机械

Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装LPTS

环境

工作温度150°C (TJ)