RSD131P10TL

Name: RSD131P10TL
Brand: Rohm Semiconductor

模拟与电源

MOSFET P-CH 100V 13A CPT3

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	200mOhm @ 6.5A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Not For New Designs
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
最大功耗	850mW (Ta), 20W (Tc)

工作温度	150°C(TJ)