RS3E075ATTB1

Name: RS3E075ATTB1
Brand: Rohm Semiconductor

模拟与电源

PCH -30V -7.5A MIDDLE POWER MOSF

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	23.5mOhm @ 7.5A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 15 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
最大功耗	2W (Ta)

工作温度	150°C(TJ)