RS1P600BETB1

Name: RS1P600BETB1
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 100V 17.5A/60A 8HSOP

已停产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9.7mOhm @ 17.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 50 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Not For New Designs
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 500µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	17.5A (Ta), 60A (Tc)
最大功耗	3W (Ta), 35W (Tc)

工作温度	150°C(TJ)