RRF015P03TL

Rohm Semiconductor

RRF015P03TL

Datasheet

模拟与电源

MOSFET P-CH 30V 1.5A TUMT3

在产3-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
最大功耗320mW (Ta)

机械

封装Tape & Reel (TR)
Package / Case3-SMD, Flat Leads
供应商器件封装TUMT3

环境

工作温度150°C(TJ)