RQ3E110AJTB

Name: RQ3E110AJTB
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 30V 11A/24A 8HSMT

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.7mOhm @ 11A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 24A (Tc)
最大功耗	2W (Ta)

工作温度	150°C(TJ)