RQ3E080GNTB

Name: RQ3E080GNTB
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 30V 8A 8HSMT

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16.7mOhm @ 8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	295 pF @ 15 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
最大功耗	2W (Ta), 15W (Tc)

工作温度	150°C(TJ)