RP1L080SNTR

Rohm Semiconductor

RP1L080SNTR

模拟与电源

MOSFET N-CH 60V 8A MPT6

停产/老旧6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs24mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
最大功耗2W (Ta)

机械

封装Tape & Reel (TR)
Package / Case6-SMD, Flat Leads
供应商器件封装MPT6

环境

工作温度150°C(TJ)