RP1E090XNTCR

Name: RP1E090XNTCR
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 30V 9A MPT6

停产/老旧6-SMD, Flat Leads模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	17mOhm @ 9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 10 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
最大功耗	2W (Ta)

工作温度	150°C(TJ)