RJ1L12BGNTLL

Name: RJ1L12BGNTLL
Brand: Rohm Semiconductor

模拟与电源

NCH 60V 120A POWER MOSFET : RJ1L

在产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.9mOhm @ 40A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 30 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 500µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
最大功耗	192W (Tc)

工作温度	150°C (TJ)