RH6P040BHTB1

Rohm Semiconductor

RH6P040BHTB1

Datasheet

模拟与电源

NCH 100V 40A, HSMT8, POWER MOSFE

在产8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15.6mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 50 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
最大功耗59W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerVDFN
供应商器件封装8-HSMT (3.2x3)

环境

工作温度150°C(TJ)