RGWX5TS65DHRC11

Rohm Semiconductor

RGWX5TS65DHRC11

Datasheet

模拟与电源

IGBT TRENCH FLD 650V 132A TO247N

在产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号RGWX5TS65
Gate Charge213 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)92 ns
Td (on/off) @ 25°C62ns/237ns
Test Condition400V, 37.5A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 75A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)132 A
Current - Collector Pulsed (Icm)300 A
Power - Max348 W

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247N

环境

工作温度-40°C ~ 175°C (TJ)