RGWS60TS65DGC13

Rohm Semiconductor

RGWS60TS65DGC13

Datasheet

模拟与电源

IGBT TRNCH FIELD 650V 51A TO247G

在产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge58 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)88 ns
Switching Energy500µJ (on), 450µJ (off)
Td (on/off) @ 25°C32ns/91ns
Test Condition400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)51 A
Current - Collector Pulsed (Icm)90 A
Power - Max156 W

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247G

环境

工作温度-40°C ~ 175°C (TJ)