RGTVX2TS65DGC11

Rohm Semiconductor

RGTVX2TS65DGC11

Datasheet

模拟与电源

IGBT TRENCH FLD 650V 111A TO247N

已停产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge123 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusNot For New Designs
Switching Energy2.08mJ (on), 1.15mJ (off)
Td (on/off) @ 25°C49ns/150ns
Test Condition400V, 60A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 60A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)111 A
Current - Collector Pulsed (Icm)240 A
Power - Max319 W

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247N

环境

工作温度-40°C ~ 175°C (TJ)