RGT8TM65DGC9

Rohm Semiconductor

RGT8TM65DGC9

Datasheet

模拟与电源

IGBT TRENCH FLD 650V 5A TO220NFM

在产TO-220-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge13.5 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
包装Tube
产品状态在产
Reverse Recovery Time (trr)40 ns
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)5 A
Current - Collector Pulsed (Icm)12 A
Power - Max16 W

机械

Package / CaseTO-220-3 Full Pack
供应商器件封装TO-220NFM

环境

工作温度-40°C ~ 175°C (TJ)