RGT8NS65DGC9

Rohm Semiconductor

RGT8NS65DGC9

Datasheet

模拟与电源

IGBT TRENCH FIELD 650V 8A TO262

在产TO-262-3 Long Leads, I2PAK, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge13.5 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)40 ns
Td (on/off) @ 25°C17ns/69ns
Test Condition400V, 4A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)8 A
Current - Collector Pulsed (Icm)12 A
Power - Max65 W

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
供应商器件封装TO-262

环境

工作温度-40°C ~ 175°C (TJ)