RGT60TS65DGC11

Rohm Semiconductor

RGT60TS65DGC11

Datasheet

模拟与电源

IGBT TRNCH FIELD 650V 55A TO247N

已停产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge58 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
包装Tube
产品状态Not For New Designs
Reverse Recovery Time (trr)58 ns
Td (on/off) @ 25°C29ns/100ns
Test Condition400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)90 A
Power - Max194 W

机械

Package / CaseTO-247-3
供应商器件封装TO-247N

环境

工作温度-40°C ~ 175°C (TJ)