RGT40NS65DGTL

Rohm Semiconductor

RGT40NS65DGTL

Datasheet

模拟与电源

IGBT TRENCH FIELD 650V 40A LPDS

已停产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge40 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
Reverse Recovery Time (trr)58 ns
Td (on/off) @ 25°C22ns/75ns
Test Condition400V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)60 A
Power - Max161 W

机械

封装Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装LPDS

环境

工作温度-40°C~175°C(TJ)