RGT16NS65DGC9

Rohm Semiconductor

RGT16NS65DGC9

Datasheet

模拟与电源

IGBT TRENCH FIELD 650V 16A TO262

在产TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge21 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)42 ns
Td (on/off) @ 25°C13ns/33ns
Test Condition400V, 8A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 8A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)16 A
Current - Collector Pulsed (Icm)24 A
Power - Max94 W

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装TO-262

环境

工作温度-40°C~175°C(TJ)