RGS60TS65HRC11

Rohm Semiconductor

RGS60TS65HRC11

Datasheet

模拟与电源

IGBT TRNCH FIELD 650V 56A TO247N

在产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号RGS60
Gate Charge36 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusActive
Switching Energy660µJ (on), 810µJ (off)
Td (on/off) @ 25°C28ns/104ns
Test Condition400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)56 A
Current - Collector Pulsed (Icm)90 A
Power - Max223 W

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247N

环境

工作温度-40°C~175°C(TJ)