RF4P025ATTCR

Name: RF4P025ATTCR
Brand: Rohm Semiconductor

模拟与电源

PCH -100V -2.5A POWER MOSFET

在产8-PowerUDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	260mOhm @ 2.5A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	590 pF @ 50 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
最大功耗	2W (Ta)

工作温度	150°C (TJ)