RF4E110GNTR

Name: RF4E110GNTR
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 30V 11A HUML2020L8

在产8-PowerUDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.3mOhm @ 11A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	504 pF @ 15 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
最大功耗	2W (Ta)

工作温度	150°C(TJ)