RF4E100AJTCR

Name: RF4E100AJTCR
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 30V 10A HUML2020L8

在产8-PowerUDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	12.4mOhm @ 10A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1460 pF @ 15 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
最大功耗	2W (Tc)

工作温度	-55°C~150°C(TJ)