RF4C100BCTCR

Name: RF4C100BCTCR
Brand: Rohm Semiconductor

模拟与电源

MOSFET P-CH 20V 10A HUML2020L8

在产8-PowerUDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	15.6mOhm @ 10A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1660 pF @ 10 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1.2V @ 1mA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
最大功耗	2W (Ta)

工作温度	150°C (TJ)