RF1005TF6S

Rohm Semiconductor

RF1005TF6S

Datasheet

模拟与电源

DIODE GEN PURP 600V 10A TO220NFM

已停产TO-220-2 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号RF1005
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusNot For New Designs
Reverse Recovery Time (trr)40 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 600 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseTO-220-2 Full Pack
供应商器件封装TO-220NFM

环境

Operating Temperature - Junction150°C (Max)