通用
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1224 pF @ 10 V |
| 制造商 | Rohm Semiconductor |
| 安装类型 | Through Hole |
| 包装 | Bulk |
| 产品状态 | 停产/老旧 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |