RD3P03BBHTL1

Name: RD3P03BBHTL1
Brand: Rohm Semiconductor

模拟与电源

NCH 100V 35A, TO-252, POWER MOSF

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	23mOhm @ 35A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 50 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
最大功耗	50W (Tc)

工作温度	150°C (TJ)