RCD080N25TL

Name: RCD080N25TL
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 250V 8A CPT3

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	300mOhm @ 4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1440 pF @ 25 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Not For New Designs
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 1mA

漏源电压	250 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
最大功耗	850mW (Ta), 20W (Tc)

工作温度	150°C(TJ)