RCD075N19TL

Name: RCD075N19TL
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 190V 7.5A CPT3

在产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	336mOhm @ 3.8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	190 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	7.5A (Tc)
最大功耗	850mW (Ta), 20W (Tc)

工作温度	150°C (TJ)