RBLQ2MM10TR

Rohm Semiconductor

RBLQ2MM10TR

Datasheet

模拟与电源

TRENCH MOS STRUCTURE, 100V, 2A

在产SOD-123F模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号RBLQ2
Capacitance @ Vr, F50pF @ 4V, 1MHz
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术Schottky

电气

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If770 mV @ 2 A
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr10 µA @ 100 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOD-123F
供应商器件封装PMDU

环境

Operating Temperature - Junction175°C