R6515ENZC8

Rohm Semiconductor

R6515ENZC8

Datasheet

模拟与电源

MOSFET N-CH 650V 15A TO3

停产/老旧TO-3P-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs315mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds910 pF @ 25 V
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 430µA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
最大功耗60W (Tc)

机械

封装Tube
Package / CaseTO-3P-3 Full Pack
供应商器件封装TO-3PF

环境

工作温度150°C (TJ)