R6509KND3TL1

Name: R6509KND3TL1
Brand: Rohm Semiconductor

模拟与电源

HIGH-SPEED SWITCHING, NCH 650V 9

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	585mOhm @ 2.8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 25 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5V @ 230µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
最大功耗	94W (Tc)

工作温度	150°C(TJ)