R6509END3TL1

Rohm Semiconductor

R6509END3TL1

Datasheet

模拟与电源

650V 9A TO-252, LOW-NOISE POWER

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs585mOhm @ 2.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 230µA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
最大功耗94W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252

环境

工作温度150°C (TJ)