R6077VNZC17

Rohm Semiconductor

R6077VNZC17

Datasheet

模拟与电源

600V 29A TO-3PF, PRESTOMOS WITH

在产TO-3P-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs51mOhm @ 23A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 100 V
制造商Rohm Semiconductor
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id6.5V @ 1.9mA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
最大功耗113W (Tc)

机械

封装Tube
Package / CaseTO-3P-3 Full Pack
供应商器件封装TO-3PF

环境

工作温度150°C (TJ)