R6000ENHTB1

Name: R6000ENHTB1
Brand: Rohm Semiconductor

模拟与电源

600V 0.5A, SOP8, LOW-NOISE POWER

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8.8Ohm @ 200mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	45 pF @ 25 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5V @ 1mA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
最大功耗	2W (Ta)

工作温度	150°C