QS5U12TR

Name: QS5U12TR
Brand: Rohm Semiconductor

模拟与电源

MOSFET N-CH 30V 2A TSMT5

在产SOT-23-5 Thin, TSOT-23-5模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	100mOhm @ 2A, 4.5V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	175 pF @ 10 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
最大功耗	1.25W (Ta)

工作温度	150°C(TJ)