HS8MA2TCR1

Rohm Semiconductor

HS8MA2TCR1

Datasheet

模拟与电源

MOSFET N/P-CH 30V 5A/7A 9DFN

在产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
基础料号HS8MA2
配置N and P-Channel
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds320pF @ 10V, 365pF @ 10V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 7A (Ta)
Power - Max2W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
供应商器件封装DFN3333-9DC

环境

工作温度150°C (TJ)