通用
| Rds On (Max) @ Id, Vgs | 98mOhm @ 1.9A, 5.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 400 V |
| 制造商 | Rohm Semiconductor |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -10V |
| Vgs(th) (Max) @ Id | 2.4V @ 18mA |