EM6M1T2R

Rohm Semiconductor

EM6M1T2R

模拟与电源

MOSFET N/P-CH 30V/20V EMT6

已停产SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
基础料号EM6M1
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds13pF @ 5V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)

电气

漏源电压30V, 20V
Current - Continuous Drain (Id) @ 25°C100mA, 200mA
Power - Max150mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
供应商器件封装EMT6

环境

工作温度150°C (TJ)