DTD113ECT116

Rohm Semiconductor

DTD113ECT116

Datasheet

模拟与电源

TRANS PREBIAS NPN 50V 0.5A SST3

在产TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号DTD113
制造商Rohm Semiconductor
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA

电气

Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Power - Max200 mW
Frequency - Transition200 MHz

机械

Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装SST3