DTC123EEBTL

Rohm Semiconductor

DTC123EEBTL

Datasheet

模拟与电源

TRANS PREBIAS NPN 50V 0.1A EMT3F

在产SC-89, SOT-490模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号DTC123
制造商Rohm Semiconductor
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
系列DTA123E
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA

电气

Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V
Power - Max150 mW
Frequency - Transition250 MHz

机械

Package / CaseSC-89, SOT-490
供应商器件封装EMT3F (SOT-416FL)