通用
| 基础料号 | DTB113 |
|---|---|
| 制造商 | Rohm Semiconductor |
| 安装类型 | Through Hole |
| 包装 | Tape & Box (TB) |
| 产品状态 | 停产/老旧 |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
机械
| Package / Case | SC-72 Formed Leads |
|---|---|
| 供应商器件封装 | SPT |