BAS16HMT116

Rohm Semiconductor

BAS16HMT116

Datasheet

模拟与电源

DIODE GEN PURP 80V 215MA SSD3

在产TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BAS16
Capacitance @ Vr, F2pF @ 0V, 1MHz
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)4 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)80 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
Current - Average Rectified (Io)215mA
Current - Reverse Leakage @ Vr500 nA @ 80 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装SSD3

环境

Operating Temperature - Junction150°C (Max)