RJK5030DPD-03#J2

Renesas

RJK5030DPD-03#J2

模拟与电源

RJK5030DPD - N CHANNEL MOSFET

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.6Ohm @ 2A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 25 V
制造商Renesas
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 1mA

电气

漏源电压500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
最大功耗41.7W (Tc)

机械

封装Bulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装MP-3A

环境

工作温度150°C